SBC857BLT1G
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- Mfr.Part #
- SBC857BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 1,834
- In Stock ：
- 1,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Length :
- 3.04mm
- Mounting Type :
- Surface Mount
- Width :
- 2.64mm
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.11mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Max Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- -650mV
- Element Configuration :
- Single
- Max Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Type :
- PNP
- Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Lead Free :
- Lead Free
- Datasheets
- SBC857BLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC857BLT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
SBC857BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC857BLT1G Applications
There are a lot of ON Semiconductor
SBC857BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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