SBC857ALT1G
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- Mfr.Part #
- SBC857ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 30,985
- In Stock ：
- 30,985
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Length :
- 3.04mm
- Width :
- 1.4mm
- Max Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 50V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 45V
- Height :
- 1.01mm
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- hFE Min :
- 125
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Max Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 300mW
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Polarity/Channel Type :
- PNP
- Published :
- 2005
- Continuous Collector Current :
- 100mA
- Series :
- Automotive, AEC-Q101
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Datasheets
- SBC857ALT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC857ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
SBC857ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
SBC857ALT1G Applications
There are a lot of ON Semiconductor
SBC857ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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