SBC856BLT1G
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- Mfr.Part #
- SBC856BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 16,960
- In Stock ：
- 16,960
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 65V
- Series :
- Automotive, AEC-Q101
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 65V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Surface Mount :
- yes
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 65V
- Height :
- 1.11mm
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -650mV
- Power Dissipation :
- 300mW
- Continuous Collector Current :
- 100mA
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- Width :
- 2.64mm
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Length :
- 3.04mm
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- hFE Min :
- 220
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Datasheets
- SBC856BLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC856BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.During maximum operation, collector current can be as low as 100mA volts.
SBC856BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC856BLT1G Applications
There are a lot of ON Semiconductor
SBC856BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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