SBC856ALT1G
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- Mfr.Part #
- SBC856ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 12,636
- In Stock ：
- 12,636
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Terminal Form :
- Gull wing
- Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.04mm
- Series :
- Automotive, AEC-Q101
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Width :
- 1.4mm
- Collector Base Voltage (VCBO) :
- 80V
- JESD-609 Code :
- e3
- Height :
- 1.01mm
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 65V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Published :
- 2005
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 65V
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- -300mV
- Transistor Type :
- PNP
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Datasheets
- SBC856ALT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC856ALT1G Overview
In this device, the DC current gain is 125 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
SBC856ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC856ALT1G Applications
There are a lot of ON Semiconductor
SBC856ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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