SBC848BLT1
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- Mfr.Part #
- SBC848BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 5,080
- In Stock ：
- 5,080
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Length :
- 3.04mm
- Collector Emitter Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency - Transition :
- 100MHz
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 30V
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 30V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 600mV
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Height :
- 1.01mm
- Factory Lead Time :
- 4 Weeks
- Width :
- 1.4mm
- Max Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2009
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Datasheets
- SBC848BLT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC848BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
SBC848BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC848BLT1G Applications
There are a lot of ON Semiconductor
SBC848BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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