SBC847CLT1G
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- Mfr.Part #
- SBC847CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 57,100
- In Stock ：
- 57,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 600mV
- Max Collector Current :
- 100mA
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Halogen Free :
- Halogen Free
- Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Radiation Hardening :
- No
- Length :
- 3.04mm
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2009
- Width :
- 1.4mm
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- Height :
- 1.01mm
- Frequency :
- 100MHz
- hFE Min :
- 420
- Pin Count :
- 3
- Datasheets
- SBC847CLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC847CLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
SBC847CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC847CLT1G Applications
There are a lot of ON Semiconductor
SBC847CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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