SBC847BLT1G

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Mfr.Part #
SBC847BLT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 45V 0.1A SOT23-3
Stock
1,729
In Stock :
1,729

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
Max Breakdown Voltage :
45V
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Continuous Collector Current :
100mA
Terminal Position :
Dual
Published :
2009
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 5V
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
ECCN Code :
EAR99
Element Configuration :
Single
Radiation Hardening :
No
Power Dissipation :
300mW
Collector Emitter Voltage (VCEO) :
45V
Max Power Dissipation :
300mW
Frequency :
100MHz
Series :
Automotive, AEC-Q101
Emitter Base Voltage (VEBO) :
6V
Max Collector Current :
100mA
Transistor Element Material :
SILICON
Halogen Free :
Halogen Free
Factory Lead Time :
4 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Current - Collector Cutoff (Max) :
15nA ICBO
Surface Mount :
yes
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Number of Terminations :
3
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transition Frequency :
100MHz
Number of Pins :
3
hFE Min :
200
Collector Emitter Breakdown Voltage :
45V
Collector Base Voltage (VCBO) :
50V
Terminal Finish :
Tin (Sn)
Datasheets
SBC847BLT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SBC847BLT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, SBC847BLT1G pinout, SBC847BLT1G datasheet PDF, SBC847BLT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SBC847BLT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SBC847BLT1G


NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SBC847BLT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.

SBC847BLT1G Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


SBC847BLT1G Applications


There are a lot of ON Semiconductor
SBC847BLT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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