SBC846BLT3G
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- Mfr.Part #
- SBC846BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 10,852
- In Stock ：
- 10,852
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 65V
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 65V
- Published :
- 2011
- Length :
- 3.04mm
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 300mW
- Height :
- 1.11mm
- Number of Pins :
- 3
- Width :
- 2.64mm
- Collector Emitter Saturation Voltage :
- 600mV
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 300mW
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector Base Voltage (VCBO) :
- 80V
- Halogen Free :
- Halogen Free
- Transition Frequency :
- 100MHz
- Datasheets
- SBC846BLT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC846BLT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
SBC846BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846BLT3G Applications
There are a lot of ON Semiconductor
SBC846BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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