SBC846BLT3
- Mfr.Part #
- SBC846BLT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 32,821
- In Stock :
- 32,821
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Emitter Breakdown Voltage :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Width :
- 2.64mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 65V
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Length :
- 3.04mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Published :
- 2011
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 65V
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Height :
- 1.11mm
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Datasheets
- SBC846BLT3

NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC846BLT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
SBC846BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846BLT3G Applications
There are a lot of ON Semiconductor
SBC846BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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