SBC846ALT1G
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- Mfr.Part #
- SBC846ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 8,318
- In Stock ：
- 8,318
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 600mV
- Terminal Form :
- Gull wing
- Length :
- 3.04mm
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.01mm
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 65V
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- hFE Min :
- 90
- Terminal Position :
- Dual
- Max Power Dissipation :
- 300mW
- Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 65V
- Collector Emitter Voltage (VCEO) :
- 65V
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 5 Weeks
- Datasheets
- SBC846ALT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC846ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 65V volts.When collector current reaches its maximum, it can reach 100mA volts.
SBC846ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846ALT1G Applications
There are a lot of ON Semiconductor
SBC846ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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