SBC817-25LT1G
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- Mfr.Part #
- SBC817-25LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 5,655
- In Stock ：
- 5,655
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Halogen Free :
- Halogen Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- yes
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pin Count :
- 3
- Pbfree Code :
- yes
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 160
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BC817
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- -65°C~150°C TJ
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Max Frequency :
- 100MHz
- Factory Lead Time :
- 10 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Continuous Collector Current :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Datasheets
- SBC817-25LT1G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC817-25LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
SBC817-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC817-25LT1G Applications
There are a lot of ON Semiconductor
SBC817-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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