SBC817-16LT3G
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- Mfr.Part #
- SBC817-16LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 288,298
- In Stock ：
- 288,298
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101
- Radiation Hardening :
- No
- Halogen Free :
- Halogen Free
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 50V
- Length :
- 3.04mm
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 100
- Height :
- 1.11mm
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Width :
- 2.64mm
- Power Dissipation :
- 300mW
- Base Part Number :
- BC817
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 45V
- Published :
- 2009
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 700mV
- Factory Lead Time :
- 6 Weeks
- Max Frequency :
- 100MHz
- Pin Count :
- 3
- Max Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Datasheets
- SBC817-16LT3G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC817-16LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 45V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
SBC817-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 45V
a transition frequency of 100MHz
SBC817-16LT3G Applications
There are a lot of ON Semiconductor
SBC817-16LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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