SBC817-16LT3
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- Mfr.Part #
- SBC817-16LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 47,236
- In Stock ：
- 47,236
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- hFE Min :
- 100
- Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Continuous Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 700mV
- Max Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Max Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 1.11mm
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Width :
- 2.64mm
- Base Part Number :
- BC817
- Factory Lead Time :
- 6 Weeks
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2009
- Halogen Free :
- Halogen Free
- Length :
- 3.04mm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SBC817-16LT3
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC817-16LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 45V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
SBC817-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 45V
a transition frequency of 100MHz
SBC817-16LT3G Applications
There are a lot of ON Semiconductor
SBC817-16LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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