SBC808-25LT1G
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- Mfr.Part #
- SBC808-25LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SBC808-25 - PNP BIPOLAR TRANSIST
- Stock
- 25,061
- In Stock ：
- 25,061
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 25V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BC808
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 25V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Current - Collector (Ic) (Max) :
- 500mA
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Surface Mount :
- yes
- Published :
- 2011
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Halogen Free :
- Halogen Free
- Datasheets
- SBC808-25LT1G
PNP -55°C~150°C TJ 100nA ICBO PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC808-25LT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
SBC808-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC808-25LT1G Applications
There are a lot of ON Semiconductor
SBC808-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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