SBC807-16LT3
- Mfr.Part #
- SBC807-16LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 33,386
- In Stock :
- 33,386
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Series :
- Automotive, AEC-Q101
- Lead Free :
- Lead Free
- Base Part Number :
- BC807
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Power Dissipation :
- 300mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- Published :
- 2010
- Datasheets
- SBC807-16LT3

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC807-16LT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 500mA volts can be achieved.
SBC807-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC807-16LT3G Applications
There are a lot of ON Semiconductor
SBC807-16LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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