SBAS16LT1G
- Mfr.Part #
- SBAS16LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- DIODE GP 100V 200MA SOT23-3
- Stock
- 28,800
- In Stock :
- 28,800
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- Manufacturer :
- onsemi
- Product Category :
- Diodes - Rectifiers - Single
- Base Part Number :
- BAS16
- Current - Average Rectified (Io) :
- 200mA DC
- Lead Free :
- Lead Free
- Halogen Free :
- Halogen Free
- Width :
- 4.5mm
- Pin Count :
- 3
- Published :
- 2013
- Max Reverse Leakage Current :
- 50μA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Forward Voltage :
- 1.25V
- Voltage - Forward (Vf) (Max) @ If :
- 1.25V @ 150mA
- Max Repetitive Reverse Voltage (Vrrm) :
- 75V
- Terminal Form :
- Gull wing
- Forward Current :
- 200mA
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Recovery Time :
- 6 ns
- Peak Reverse Current :
- 1μA
- Pbfree Code :
- yes
- Max Reverse Voltage (DC) :
- 75V
- Surface Mount :
- yes
- Max Surge Current :
- 500mA
- Max Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Reverse Leakage @ Vr :
- 1μA @ 100V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Reverse Recovery Time :
- 6 ns
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Operating Temperature - Junction :
- -55°C~150°C
- JESD-609 Code :
- e3
- Voltage - DC Reverse (Vr) (Max) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Height :
- 1.01mm
- Output Current-Max :
- 0.2A
- Element Configuration :
- Single
- HTS Code :
- 8541.10.00.70
- Length :
- 3.04mm
- Factory Lead Time :
- 4 Weeks
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 300mW
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Terminal Position :
- Dual
- Average Rectified Current :
- 200mA
- Min Operating Temperature :
- -55°C
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Capacitance @ Vr, F :
- 2pF @ 0V 1MHz
- Diode Element Material :
- SILICON
- Datasheets
- SBAS16LT1G

Standard Diode Rectifier Small Signal =< 200mA (Io), Any Speed 1.25V @ 150mA -55°C~150°C 1μA @ 100V 3-Termination Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3 Surface Mount
SBAS16LT1G Overview
Phase diode rectifier produces a maximum reverse leakage current of 50μA volts.As a result, this device has a rectified current of 200mA volts on average.A device like this produces no heat as a secondary effect of its primary operation.Phase diode rectifier is permissible for forward current to reach 200mA.300mW heat is lost most efficiently by electronic or electrical devices.There is no maximum value for 500mA surge current.Using the output current as an example, 0.2A is the maximum value.Based on the data charts in the datasheets, the peak reverse is 1μA.
SBAS16LT1G Features
a maximal reverse leakage current of 50μA volts
an average rectified current of 200mA volts
the least amount of 300mW heat (energy loss)
0.2A is the maximum value
the peak reverse is 1μA
SBAS16LT1G Applications
There are a lot of ON Semiconductor
SBAS16LT1G applications of single-phase diode rectifier.
- DC motor control and drives
- Battery chargers
- Welders
- Power converters
- Reverse Polarity Protection
- Ultra High-Speed Switching
- Freewheeling
- Polarity Protection Diode
- Recirculating Diode
- Switching Diode
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