S9S08SG4E2CTJR

Manufacturer :

NXP Semiconductors

Product Category :

Microcontrollers

Program Memory Type :

Flash

Number of Terminations :

20

HTS Code :

8542.31.00.01

Speed :

40MHz

JESD-609 Code :

e3

Length :

6.5mm

Core Size :

8-Bit

Supply Current-Max :

120mA

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Published :

2012

Height Seated (Max) :

1.2mm

Peripherals :

LVD, POR, PWM, WDT

Has ADC :

yes

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RAM (bytes) :

256

Package / Case :

20-TSSOP (0.173, 4.40mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

Supply Voltage :

5V

Bit Size :

8

Screening Level :

AEC-Q100

Connectivity :

I²C, IrDA, LINbus, SPI, UART/USART

Peak Reflow Temperature (Cel) :

260

PWM Channels :

yes

Terminal Form :

Gull wing

Supply Voltage-Min (Vsup) :

2.7V

DAC Channels :

No

Power Supplies :

3/5V

ROM (words) :

4096

Oscillator Type :

Internal

Data Converter :

A/D 12x10b

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G20

uPs/uCs/Peripheral ICs Type :

MICROCONTROLLER

Terminal Finish :

MATTE TIN

Program Memory Size :

4KB 4K x 8

Mounting Type :

Surface Mount

Terminal Position :

Dual

Supply Voltage-Max (Vsup) :

5.5V

Series :

S08

Terminal Pitch :

0.65mm

Operating Temperature :

-40°C~85°C TA

Factory Lead Time :

12 Weeks

Qualification Status :

Not Qualified

Number of I/O :

16

RAM Size :

256 x 8

DMA Channels :

No

Voltage - Supply (Vcc/Vdd) :

2.7V~5.5V

Width :

5mm