S9012-G-AP

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Mfr.Part #
S9012-G-AP
Manufacturer
Micro Commercial Components (MCC)
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet
Download
Description
TRANS PNP 25V 0.5A TO92
Stock
7,691
In Stock :
7,691

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Manufacturer :
Micro Commercial Components (MCC)
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current - Collector (Ic) (Max) :
500mA
Number of Elements :
1
Transition Frequency :
150MHz
Transistor Type :
PNP
Qualification Status :
Not Qualified
Configuration :
Single
Current - Collector Cutoff (Max) :
200nA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
150MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Voltage - Collector Emitter Breakdown (Max) :
25V
Surface Mount :
No
Terminal Position :
BOTTOM
DC Current Gain (hFE) (Min) @ Ic, Vce :
112 @ 1mA 4V
ECCN Code :
EAR99
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
O-PBCY-T3
Vce Saturation (Max) @ Ib, Ic :
600mV @ 50mA, 500mA
Pin Count :
3
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Polarity/Channel Type :
PNP
Terminal Finish :
Matte Tin (Sn)
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Power - Max :
625mW
Datasheets
S9012-G-AP
Introducing Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) S9012-G-AP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, S9012-G-AP pinout, S9012-G-AP datasheet PDF, S9012-G-AP amp .Beyond Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) S9012-G-AP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Micro Commercial Components (MCC) S9012-G-AP


PNP -55°C~150°C TJ 200nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole

S9012-G-AP Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 112 @ 1mA 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 50mA, 500mA.Parts of this part have transition frequencies of 150MHz.This device displays a 25V maximum voltage - Collector Emitter Breakdown.

S9012-G-AP Features


the DC current gain for this device is 112 @ 1mA 4V
the vce saturation(Max) is 600mV @ 50mA, 500mA
a transition frequency of 150MHz


S9012-G-AP Applications


There are a lot of Micro Commercial Co
S9012-G-AP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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