S2SC4617G
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- Mfr.Part #
- S2SC4617G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SC75 SOT416
- Stock
- 31,453
- In Stock ：
- 31,453
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-75, SOT-416
- Collector Emitter Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Pin Count :
- 3
- Base Part Number :
- 2SC4617
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 60mA
- Transition Frequency :
- 180MHz
- Published :
- 2014
- Terminal Finish :
- Tin (Sn)
- Continuous Collector Current :
- 100mA
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Collector Current :
- 100mA
- Frequency :
- 180MHz
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 125mW
- Transistor Application :
- AMPLIFIER
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Halogen Free :
- Halogen Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 180MHz
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 125mW
- hFE Min :
- 120
- Collector Emitter Saturation Voltage :
- 400mV
- Datasheets
- S2SC4617G
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
S2SC4617G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
S2SC4617G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
S2SC4617G Applications
There are a lot of ON Semiconductor
S2SC4617G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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