S25FL128SAGMFVG03

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Format :

Flash

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

SYNCHRONOUS

Endurance :

100000 Write/Erase Cycles

Height Seated (Max) :

2.65mm

Power Supplies :

3/3.3V

JESD-609 Code :

e3

Write Cycle Time-Max (tWC) :

500ms

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Length :

10.3mm

Packaging :

Tape and Reel (TR)

Supply Voltage-Min (Vsup) :

2.7V

Supply Current-Max :

0.1mA

Write Protection :

HARDWARE/SOFTWARE

Number of Terminations :

16

Width :

7.5mm

Memory Type :

Non-Volatile

RoHS Status :

ROHS3 Compliant

Additional Feature :

ALSO CONFIGURABLE AS 128M X 1

JESD-30 Code :

R-PDSO-G16

Supply Voltage-Max (Vsup) :

3.6V

Clock Frequency :

133MHz

Memory Interface :

SPI - Quad I/O

Terminal Position :

Dual

Operating Temperature :

-40°C~105°C TA

Interface :

SPI, Serial

Memory Width :

8

Serial Bus Type :

SPI

Programming Voltage :

3V

Factory Lead Time :

13 Weeks

HTS Code :

8542.32.00.51

Alternate Memory Width :

2

Memory Size :

128Mb 16M x 8

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Organization :

16MX8

Memory Density :

134217728 bit

Terminal Pitch :

1.27mm

Surface Mount :

yes

Data Retention Time-Min :

20

Supply Voltage :

3V

Series :

FL-S

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Voltage - Supply :

2.7V~3.6V

Standby Current-Max :

0.0003A