R8010
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- Mfr.Part #
- R8010
- Manufacturer
- REED Instruments
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- LASER DISTANCE METER, 328'
- Stock
- 2,467
- In Stock ：
- 2,467
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- Manufacturer :
- REED Instruments
- Product Category :
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 800V
- Rds On (Max) @ Id, Vgs :
- 560m Ω @ 5A, 10V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 10 Weeks
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 10A
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Power Dissipation-Max :
- 40W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Package / Case :
- TO-220-3 Full Pack
- Avalanche Energy Rating (Eas) :
- 6.63 mJ
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 800V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Packaging :
- Bulk
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 40A
- Published :
- 2013
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.56Ohm
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 25V
- Datasheets
- R8010
N-Channel Bulk 560m Ω @ 5A, 10V ±30V 1750pF @ 25V 62nC @ 10V 800V TO-220-3 Full Pack
R8010ANX Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 6.63 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1750pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).Peak drain current is 40A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
R8010ANX Features
the avalanche energy rating (Eas) is 6.63 mJ
a continuous drain current (ID) of 10A
based on its rated peak drain current 40A.
a 800V drain to source voltage (Vdss)
R8010ANX Applications
There are a lot of ROHM Semiconductor
R8010ANX applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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