R1RW0416DGE-2PI#B0

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Mfr.Part #
R1RW0416DGE-2PI#B0
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
44-BSOJ (0.400, 10.16mm Width)
Datasheet
Download
Description
IC SRAM 4MBIT PARALLEL 44SOJ
Stock
9,873
In Stock :
9,873

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Memory
Write Cycle Time - Word, Page :
12ns
Output Characteristics :
3-STATE
Standby Voltage-Min :
3V
Number of Terminations :
44
I/O Type :
COMMON
Address Bus Width :
18b
RoHS Status :
ROHS3 Compliant
Word Size :
16b
Memory Width :
16
Lead Free :
Lead Free
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Pbfree Code :
yes
Memory Interface :
Parallel
Operating Supply Voltage :
3.3V
Sync/Async :
ASYNCHRONOUS
Terminal Position :
Dual
Memory Size :
4Mb 256K x 16
Nominal Supply Current :
130mA
Number of Pins :
44
Operating Temperature :
-40°C~85°C TA
Radiation Hardening :
No
Memory Type :
Volatile
Standby Current-Max :
0.005A
Packaging :
Tube
Pin Count :
44
Voltage - Supply :
3V~3.6V
Density :
4 Mb
Number of Ports :
1
Published :
2010
Supply Voltage :
3.3V
Package / Case :
44-BSOJ (0.400, 10.16mm Width)
Memory Format :
SRAM
Mounting Type :
Surface Mount
Introducing Memory Intersil (Renesas Electronics Corporation) R1RW0416DGE-2PI#B0 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:44, Number of Pins:44, Operating Temperature:-40°C~85°C TA, Package / Case:44-BSOJ (0.400, 10.16mm Width), Mounting Type:Surface Mount, R1RW0416DGE-2PI#B0 pinout, R1RW0416DGE-2PI#B0 datasheet PDF, R1RW0416DGE-2PI#B0 amp .Beyond Memory Intersil (Renesas Electronics Corporation) R1RW0416DGE-2PI#B0 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) R1RW0416DGE-2PI#B0


Memory Intersil (Renesas Electronics Corporation) R1RW0416DGE-2PI#B0 Overview

The Memory Intersil (Renesas Electronics Corporation) R1RW0416DGE-2PI#B0 is a high-performance 4Mbit SRAM chip designed for rapid access and reliable data retention. Engineered by a leader in semiconductor innovation, this IC features a parallel interface and comes packaged in a compact 44SOJ format. Ideal for demanding applications where speed and stability are crucial, this SRAM module offers a robust solution for data-intensive operations. Its high-density memory architecture ensures extensive storage capacity while maintaining a low power footprint, making it a prime choice for both industrial and commercial applications looking to leverage advanced memory technology.

R1RW0416DGE-2PI#B0 Features

This IC SRAM by Renesas offers several features that make it a versatile and essential component in any advanced electronic system:

  • 4Mbit high-density memory capacity
  • Parallel interface for fast data access
  • Low power consumption enhancing device longevity
  • Compact 44SOJ package suitable for space-sensitive applications
  • Stable data retention under a range of environmental conditions

R1RW0416DGE-2PI#B0 Applications

  • Automotive Electronics: Used in vehicle systems for storing data crucial for engine control units and infotainment systems.
  • Telecommunications: Essential in telecommunications equipment for quick data buffer management, enhancing signal integrity and processing speed.
  • Industrial Automation: Provides reliable and fast data storage for PLCs and industrial control systems, facilitating complex automation tasks.
  • Medical Devices: Utilized in medical imaging systems to handle large amounts of data efficiently, ensuring swift processing and reliability.
  • Consumer Electronics: Ideal for high-performance consumer electronics such as gaming consoles and smart TVs, where rapid data access is required for enhanced user experience.
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