QSL12TR
- Mfr.Part #
- QSL12TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TSMT5
- Stock
- 3,746
- In Stock :
- 3,746
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Pin Count :
- 5
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- TIN SILVER COPPER
- Collector Base Voltage (VCBO) :
- 30V
- Package / Case :
- SOT-23-5 Thin, TSOT-23-5
- Max Power Dissipation :
- 500mW
- Max Collector Current :
- 1A
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Polarity :
- NPN
- Factory Lead Time :
- 20 Weeks
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Transition Frequency :
- 320MHz
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 1A
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Gain Bandwidth Product :
- 320MHz
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 120mV
- hFE Min :
- 270
- Pbfree Code :
- yes
- Number of Pins :
- 5
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN + Diode (Isolated)
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Number of Terminations :
- 5
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Datasheets
- QSL12TR

NPN + Diode (Isolated) 150°C TJ 100nA ICBO 1 Elements 5 Terminations SILICON SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Surface Mount
QSL12TR Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.320MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
QSL12TR Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
QSL12TR Applications
There are a lot of ROHM Semiconductor
QSL12TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
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| QSL11TR | ROHM Semiconductor | 2,640 | TRANS PNP 30V 1A TSMT5 |
















