PZT2907AT1G
- Mfr.Part #
- PZT2907AT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT223
- Stock
- 651
- In Stock :
- 651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Max Collector Current :
- 600mA
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Base Part Number :
- PZT2907A
- Max Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- -1.6V
- Voltage - Rated DC :
- -60V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Transition Frequency :
- 200MHz
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 200MHz
- Height :
- 1.651mm
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Length :
- 6.6802mm
- Number of Pins :
- 4
- Weight :
- 4.535924g
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current Rating :
- -600mA
- Power Dissipation :
- 1.5W
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 100
- Width :
- 3.7084mm
- Frequency :
- 200MHz
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 1.5W
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 8 Weeks
- Datasheets
- PZT2907AT1G

PNP -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2907AT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.
PZT2907AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
PZT2907AT1G Applications
There are a lot of ON Semiconductor
PZT2907AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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