PZT2907AT1
- Mfr.Part #
- PZT2907AT1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS SS SW PNP 600MA 60V SOT223
- Stock
- 2,148
- In Stock :
- 2,148
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Position :
- Dual
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Base Part Number :
- PZT2907A
- Power Dissipation :
- 1.5W
- Polarity/Channel Type :
- PNP
- Length :
- 6.6802mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- Current Rating :
- -600mA
- Package / Case :
- TO-261-4, TO-261AA
- Height :
- 1.651mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Frequency :
- 200MHz
- Collector Emitter Saturation Voltage :
- -1.6V
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 3.7084mm
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 200MHz
- Surface Mount :
- yes
- Max Power Dissipation :
- 1.5W
- hFE Min :
- 100
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Published :
- 2006
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 60V
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -60V
- Collector Base Voltage (VCBO) :
- 60V
- REACH SVHC :
- No SVHC
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Elements :
- 1
- Max Collector Current :
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Gain Bandwidth Product :
- 200MHz
- Factory Lead Time :
- 8 Weeks
- Datasheets
- PZT2907AT1

PNP -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT2907AT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.
PZT2907AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
PZT2907AT1G Applications
There are a lot of ON Semiconductor
PZT2907AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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