PUMD48,125

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

47k Ω, 2.2k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Polarity :

NPN, PNP

Current - Collector Cutoff (Max) :

1μA

Terminal Form :

Gull wing

Max Power Dissipation :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 100 @ 10mA 5V

HTS Code :

8541.21.00.75

Number of Pins :

6

JESD-609 Code :

e3

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

10V

Pin Count :

6

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

Published :

2011

Packaging :

Tape and Reel (TR)

hFE Min :

80

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

P*MD48

Max Collector Current :

100mA

Min Operating Temperature :

-65°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Lead Free :

Lead Free

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Power Dissipation :

200mW

Number of Elements :

2

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

47k Ω

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 100mV @ 250μA, 5mA