PTF180101S V1
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- Mfr.Part #
- PTF180101S V1
- Manufacturer
- Infineon Technologies
- Package / Case
- H32259-2
- Datasheet
- Download
- Description
- FET RF 65V 1.99GHZ H-32259-2
- Stock
- 7,090
- In Stock ：
- 7,090
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - RF
- DS Breakdown Voltage-Min :
- 65V
- Series :
- GOLDMOS®
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Operating Temperature (Max) :
- 200°C
- JESD-30 Code :
- S-XDSO-G2
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Frequency :
- 1.99GHz
- Package / Case :
- H32259-2
- Current Rating (Amps) :
- 1μA
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- yes
- Power - Output :
- 10W
- Published :
- 2004
- Voltage - Test :
- 28V
- Transistor Type :
- LDMOS
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Case Connection :
- SOURCE
- Additional Feature :
- High Reliability
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated :
- 65V
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gain :
- 19dB
- Current - Test :
- 180mA
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Datasheets
- PTF180101S V1
PTF180101S V1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies stock available at
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