PN3638A

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Mfr.Part #
PN3638A
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 25V 0.8A TO92-3
Stock
284
In Stock :
284

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
25V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Collector Emitter Voltage (VCEO) :
25V
Base Part Number :
PN3638A
Max Operating Temperature :
150°C
Mount :
Through Hole
Transistor Type :
PNP
Power Dissipation :
625mW
Supplier Device Package :
TO-92-3
Current - Collector Cutoff (Max) :
35nA
Max Power Dissipation :
625mW
Collector Emitter Saturation Voltage :
1V
Published :
1997
Vce Saturation (Max) @ Ib, Ic :
1V @ 30mA, 300mA
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 300mA 2V
Voltage - Rated DC :
-25V
Polarity :
PNP
Mounting Type :
Through Hole
Current - Collector (Ic) (Max) :
800mA
Collector Emitter Breakdown Voltage :
25V
Packaging :
Bulk
Emitter Base Voltage (VEBO) :
4.9V
Power - Max :
625mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
201mg
Number of Elements :
1
Max Collector Current :
800mA
hFE Min :
20
Number of Pins :
3
Min Operating Temperature :
-55°C
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
25V
Element Configuration :
Single
REACH SVHC :
No SVHC
Current Rating :
-300mA
Datasheets
PN3638A
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. PN3638A from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Base Part Number:PN3638A, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, PN3638A pinout, PN3638A datasheet PDF, PN3638A amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. PN3638A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. PN3638A


PNP -55°C~150°C TJ 35nA 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

PN3638A Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 300mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 30mA, 300mA.The emitter base voltage can be kept at 4.9V for high efficiency.The current rating of this fuse is -300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (25V maximal voltage).Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.

PN3638A Features


the DC current gain for this device is 20 @ 300mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 30mA, 300mA
the emitter base voltage is kept at 4.9V
the current rating of this device is -300mA
the supplier device package of TO-92-3


PN3638A Applications


There are a lot of ON Semiconductor
PN3638A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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