PN3638A
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- Mfr.Part #
- PN3638A
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.8A TO92-3
- Stock
- 284
- In Stock ：
- 284
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 25V
- Current - Collector Cutoff (Max) :
- 35nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-92-3
- Packaging :
- Bulk
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -25V
- Current Rating :
- -300mA
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- hFE Min :
- 20
- Emitter Base Voltage (VEBO) :
- 4.9V
- Min Operating Temperature :
- -55°C
- Mount :
- Through Hole
- Number of Elements :
- 1
- Polarity :
- PNP
- Published :
- 1997
- Current - Collector (Ic) (Max) :
- 800mA
- Max Collector Current :
- 800mA
- Base Part Number :
- PN3638A
- Number of Pins :
- 3
- Weight :
- 201mg
- Power - Max :
- 625mW
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 25V
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 300mA 2V
- Collector Emitter Saturation Voltage :
- 1V
- Collector Base Voltage (VCBO) :
- 25V
- Max Operating Temperature :
- 150°C
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 30mA, 300mA
- Datasheets
- PN3638A
PN3638A Documents
PNP -55°C~150°C TJ 35nA 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN3638A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 300mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 30mA, 300mA.The emitter base voltage can be kept at 4.9V for high efficiency.The current rating of this fuse is -300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (25V maximal voltage).Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
PN3638A Features
the DC current gain for this device is 20 @ 300mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 30mA, 300mA
the emitter base voltage is kept at 4.9V
the current rating of this device is -300mA
the supplier device package of TO-92-3
PN3638A Applications
There are a lot of ON Semiconductor
PN3638A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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