PN2222ATF
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- Mfr.Part #
- PN2222ATF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92-3
- Stock
- 16,723
- In Stock ：
- 16,723
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Frequency :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Transition Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current Rating :
- 1A
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 75V
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Height :
- 5.33mm
- hFE Min :
- 100
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 300MHz
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- PN2222
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Elements :
- 1
- Turn Off Time-Max (toff) :
- 285ns
- Pbfree Code :
- yes
- Weight :
- 240mg
- Width :
- 4.19mm
- Max Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Collector Emitter Saturation Voltage :
- 1V
- Published :
- 2007
- Factory Lead Time :
- 6 Weeks
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Length :
- 5.2mm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 625mW
- Datasheets
- PN2222ATF
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
PN2222ATF Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PN2222ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz
PN2222ATF Applications
There are a lot of ON Semiconductor
PN2222ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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