PN2222ATA
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- Mfr.Part #
- PN2222ATA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92-3
- Stock
- 4,789
- In Stock ：
- 4,789
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.19mm
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 1V
- Length :
- 5.2mm
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Height :
- 5.33mm
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Current Rating :
- 1A
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Turn Off Time-Max (toff) :
- 285ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Pbfree Code :
- yes
- Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Max Breakdown Voltage :
- 25V
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Transition Frequency :
- 300MHz
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 75V
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 40V
- Weight :
- 240mg
- Lead Free :
- Lead Free
- Max Collector Current :
- 1A
- Base Part Number :
- PN2222
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Datasheets
- PN2222ATA
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PN2222ATA Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 1A volts.
PN2222ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz
PN2222ATA Applications
There are a lot of ON Semiconductor
PN2222ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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