PN100
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- Mfr.Part #
- PN100
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO92-3
- Stock
- 5,328
- In Stock ：
- 5,328
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Voltage - Rated DC :
- 45V
- Collector Base Voltage (VCBO) :
- 75V
- ECCN Code :
- EAR99
- VCEsat-Max :
- 0.2 V
- Pbfree Code :
- yes
- Weight :
- 201mg
- Transition Frequency :
- 250MHz
- Published :
- 2008
- Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 400mV
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200mA
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 1V
- hFE Min :
- 300
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Collector-Base Capacitance-Max :
- 4.5pF
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50nA
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Base Part Number :
- PN100
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Factory Lead Time :
- 15 Weeks
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Current Rating :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 250MHz
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 250MHz
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lead Free :
- Lead Free
- Datasheets
- PN100
NPN -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN100A Overview
In this device, the DC current gain is 300 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 200mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PN100A Features
the DC current gain for this device is 300 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 250MHz
PN100A Applications
There are a lot of ON Semiconductor
PN100A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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