PMXB65ENEZ

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Vgs (Max) :

±20V

Pin Count :

3

Package / Case :

3-XDFN Exposed Pad

Number of Channels :

1

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.067Ohm

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Height :

400μm

Published :

2016

Rds On (Max) @ Id, Vgs :

67m Ω @ 3.2A, 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

11 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 15V

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Max Dual Supply Voltage :

30V

Max Junction Temperature (Tj) :

150°C

JESD-30 Code :

R-PDSO-N2

Continuous Drain Current (ID) :

3.2A

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

400mW

Rise Time :

12ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

2

Ambient Temperature Range High :

150°C

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

3 ns

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Radiation Hardening :

No

Case Connection :

DRAIN

Number of Elements :

1

Turn On Delay Time :

3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

400mW Ta 8.33W Tc

Number of Pins :

3