PMV33UPE215
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- Mfr.Part #
- PMV33UPE215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA PMV33UPE - SMALL SI
- Stock
- 55,197
- In Stock ：
- 55,197
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Power Dissipation-Max :
- 490mW Ta
- Published :
- 2012
- Input Capacitance (Ciss) (Max) @ Vds :
- 1820pF @ 10V
- Max Dual Supply Voltage :
- -20V
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 20V
- Continuous Drain Current (ID) :
- 4.4A
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 39 ns
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Ta
- Turn On Delay Time :
- 11 ns
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 22.1nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 8V
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 83 ns
- Rise Time :
- 30ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 950mV @ 250μA
- Vgs (Max) :
- ±8V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 3A, 4.5V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PMV33UPE215
Specialized ICs NXP Semiconductors PMV33UPE215 Overview
The Specialized ICs NXP Semiconductors PMV33UPE215 is a high-performance P-Channel MOSFET designed for efficient power management in a compact package. With a low on-resistance of 36m Ω at a 4.5V drive, this component offers excellent thermal performance and reliability for high-efficiency applications. The device supports a drain-source voltage of 20V and can handle a continuous drain current of up to 3A, making it an ideal choice for power-sensitive and space-constrained applications. Its gate-source voltage stands at ±8V, highlighting its robustness in varied operating conditions. With a total gate charge of 22.1nC at 4.5V, this MOSFET ensures rapid switching, reducing power losses and improving overall system efficiency.
Specialized ICs NXP Semiconductors PMV33UPE215 Key Features
The PMV33UPE215 boasts several key features that make it stand out:
- Low on-resistance of 36m Ω at 4.5V, enabling high efficiency
- Continuous drain current (ID) of 3A, suitable for heavy-load applications
- Gate-source voltage of ±8V, offering flexibility in various electrical environments
- High capacitance of 1820pF at 10V, providing robust power handling capabilities
- Compact TO-236-3, SC-59, SOT-23-3 package, perfect for space-constrained applications
Specialized ICs NXP Semiconductors PMV33UPE215 Applications
The PMV33UPE215 is versatile enough for use in various applications, such as:
- Synchronous Rectification in ATX, Server, and Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverters
- DC/DC converters
- Power tools
- Battery Protection Circuits
- Telecom and Server Power Supplies
- Industrial Power Supplies
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