PMMT591A,235
- Mfr.Part #
- PMMT591A,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO236AB
- Stock
- 23,486
- In Stock :
- 23,486
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 150MHz
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Gain Bandwidth Product :
- 150MHz
- Published :
- 2009
- Max Power Dissipation :
- 250mW
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 150MHz
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PMMT591A
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PMMT591A,235

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMMT591A,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 1A volts.
PMMT591A,235 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMMT591A,235 Applications
There are a lot of Nexperia USA Inc.
PMMT591A,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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