PMBS3906,235
- Mfr.Part #
- PMBS3906,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.1A TO236AB
- Stock
- 205,104
- In Stock :
- 205,104
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 150MHz
- Pin Count :
- 3
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 40V
- Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Base Part Number :
- PMBS3906
- Transition Frequency :
- 150MHz
- Turn Off Time-Max (toff) :
- 700ns
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Max Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- Datasheets
- PMBS3906,235

PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBS3906,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.A maximum collector current of 100mA volts can be achieved.
PMBS3906,235 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMBS3906,235 Applications
There are a lot of Nexperia USA Inc.
PMBS3906,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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