PHPT61003PYX
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- Mfr.Part #
- PHPT61003PYX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A LFPAK56 PWRSO8
- Stock
- 24,388
- In Stock ：
- 24,388
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 125MHz
- JESD-30 Code :
- R-PSSO-G4
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 10V
- Published :
- 2014
- Emitter Base Voltage (VEBO) :
- -8V
- Base Part Number :
- PHPT61003P
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Number of Terminations :
- 4
- Operating Temperature :
- 175°C TJ
- Transistor Type :
- PNP
- Terminal Position :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 100V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- -110mV
- Continuous Collector Current :
- -3A
- Power - Max :
- 1.25W
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 100V
- Package / Case :
- SC-100, SOT-669
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- -100V
- Max Power Dissipation :
- 25W
- Max Collector Current :
- 3A
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 5
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 25W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 125MHz
- Datasheets
- PHPT61003PYX
PNP 175°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP SC-100, SOT-669 Tape & Reel (TR) Surface Mount
PHPT61003PYX Overview
In this device, the DC current gain is 150 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -110mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 360mV @ 200mA, 2A.Maintaining the continuous collector voltage at -3A is essential for high efficiency.Keeping the emitter base voltage at -8V allows for a high level of efficiency.125MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
PHPT61003PYX Features
the DC current gain for this device is 150 @ 500mA 10V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 360mV @ 200mA, 2A
the emitter base voltage is kept at -8V
a transition frequency of 125MHz
PHPT61003PYX Applications
There are a lot of Nexperia USA Inc.
PHPT61003PYX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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