PH2525L115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Height :

1.1mm

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

300A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Pin Count :

4

Drain-source On Resistance-Max :

0.0039Ohm

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 25A, 10V

Number of Pins :

5

Package / Case :

SC-100, SOT-669

Radiation Hardening :

No

Width :

4.1mm

JESD-30 Code :

R-PSSO-G4

Rise Time :

92ns

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Fall Time (Typ) :

37 ns

Packaging :

Tape and Reel (TR)

Published :

2006

Series :

TrenchMOS™

Power Dissipation :

62.5W

Terminal Finish :

Tin (Sn)

Length :

5mm

Turn On Delay Time :

41 ns

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

100A

Transistor Element Material :

SILICON

Terminal Position :

Single

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Gate Charge (Qg) (Max) @ Vgs :

34.7nC @ 4.5V

Turn-Off Delay Time :

53 ns

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

320 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4470pF @ 12V

Number of Elements :

1

Power Dissipation-Max :

62.5W Tc

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

100A Tc