PDTA143EMB,315
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- Mfr.Part #
- PDTA143EMB,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA PDTA143EMB - SMALL
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 50V
- Packaging :
- Tape and Reel (TR)
- Min Operating Temperature :
- -65°C
- Max Power Dissipation :
- 250mW
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 100mA
- Base Part Number :
- PDTA143
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 150mV
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 180MHz
- Published :
- 2012
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Mount :
- Surface Mount
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Frequency - Transition :
- 180MHz
- Max Operating Temperature :
- 150°C
- Case Connection :
- COLLECTOR
- Package / Case :
- 3-XFDFN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 1μA
- Datasheets
- PDTA143EMB,315
PNP 1 Elements 3 Terminations PNP 3-XFDFN Tape & Reel (TR) Surface Mount
PDTA143EMB,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 500μA, 10mA.Parts of this part have transition frequencies of 180MHz.During maximum operation, collector current can be as low as 1μA volts.
PDTA143EMB,315 Features
the DC current gain for this device is 30 @ 10mA 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
a transition frequency of 180MHz
PDTA143EMB,315 Applications
There are a lot of Nexperia USA Inc.
PDTA143EMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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