OPA1S2385IDRCR
- Mfr.Part #
- OPA1S2385IDRCR
- Manufacturer
- Texas Instruments
- Package / Case
- 10-VFDFN Exposed Pad
- Datasheet
- Download
- Description
- IC TRANSIMPEDANCE 2 CIRC 10VSON
- Stock
- 5,746
- In Stock :
- 5,746
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- Manufacturer :
- Texas Instruments
- Product Category :
- Instrumentation, OP Amps, Buffer Amps
- Pin Count :
- 10
- Architecture :
- VOLTAGE-FEEDBACK
- Low-Offset :
- No
- Base Part Number :
- OPA1S2385
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Output Type :
- Rail-to-Rail
- Height :
- 1mm
- Lead Free :
- Lead Free
- Average Bias Current-Max (IIB) :
- 0.00005μA
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Number of Pins :
- 10
- Bias Current-Max (IIB) @25C :
- 0.00005μA
- Operating Temperature :
- -40°C~125°C
- Low-Bias :
- yes
- Input Offset Current-Max (IIO) :
- 0.00005μA
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Supply Voltage :
- 3.3V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 10
- Frequency Compensation :
- yes
- Package / Case :
- 10-VFDFN Exposed Pad
- RoHS Status :
- ROHS3 Compliant
- Voltage Gain :
- 110dB
- Number of Functions :
- 2
- Power Supplies :
- 3/5V
- Number of Elements :
- 2
- Output Current per Channel :
- 100mA
- Operating Supply Current :
- 9.2mA
- Unity Gain BW-Nom :
- 100000 kHz
- Packing Method :
- TR
- Amplifier Type :
- CMOS
- Pbfree Code :
- yes
- Width :
- 3mm
- Slew Rate :
- 150V/μs
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Common Mode Rejection Ratio :
- 50 dB
- Micropower :
- No
- Supply Voltage Limit-Max :
- 6V
- Packaging :
- Tape and Reel (TR)
- Current - Input Bias :
- 3pA
- Thickness :
- 900μm
- Max Input Voltage :
- 5.5V
- Nominal Supply Current :
- 9.2mA
- Length :
- 3mm
- Voltage - Supply, Single/Dual (±) :
- 2.7V~5.5V
- Terminal Position :
- Dual
- Terminal Pitch :
- 0.5mm
- JESD-609 Code :
- e4
- Power Supply Rejection Ratio (PSRR) :
- 73.98dB
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Programmable Power :
- No
- Factory Lead Time :
- 12 Weeks
- Bandwidth :
- 250MHz
- Radiation Hardening :
- No
- Input Offset Voltage (Vos) :
- 2mV
- Datasheets
- OPA1S2385IDRCR

Instrumentation, Texas Instruments OPA1S2385IDRCR Overview
Introducing the cutting-edge OPA1S2385IDRCR by Texas Instruments, a revolutionary integrated circuit meticulously crafted for unparalleled performance in the field of instrumentation. This highly sophisticated transimpedance amplifier boasts exceptional sensitivity and precision, making it the preferred choice for demanding applications in various industries.
Designed with utmost precision and expertise, the OPA1S2385IDRCR delivers unparalleled signal amplification and conditioning capabilities, ensuring optimal performance even in the most challenging environments. Its innovative design and advanced features make it a cornerstone in the realm of instrumentation, empowering engineers and researchers to push the boundaries of technology.
Experience the pinnacle of performance and reliability with the Texas Instruments OPA1S2385IDRCR, setting new standards of excellence in the field of instrumentation.
OPA1S2385IDRCR Features
- Ultra-sensitive transimpedance amplifier
- Precision signal conditioning
- High-speed performance
- Wide dynamic range
- Low noise operation
- Compact 10VSON package
- Robust construction for industrial applications
OPA1S2385IDRCR Applications
- Laser Diode Drivers: The OPA1S2385IDRCR is ideally suited for laser diode driver circuits, providing precise current-to-voltage conversion and signal conditioning for optimal laser performance in industrial laser systems and scientific instrumentation.
- Photodiode Amplifiers: With its ultra-sensitive transimpedance amplifier, the OPA1S2385IDRCR is the perfect choice for photodiode amplifier circuits, enabling high-precision detection of weak optical signals in applications such as spectroscopy, lidar, and optical communication systems.
- Optical Receivers: In optical communication systems, the OPA1S2385IDRCR plays a crucial role in amplifying and conditioning the weak optical signals received by photodetectors, ensuring reliable data transmission over long distances in telecommunications networks and data centers.
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