NZT751

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA ICBO

Voltage - Rated DC :

-60V

Max Collector Current :

4A

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2A 2V

Collector Emitter Saturation Voltage :

500mV

hFE Min :

75

Number of Terminations :

4

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

-5V

Transistor Type :

PNP

Transition Frequency :

75MHz

Collector Base Voltage (VCBO) :

-80V

Transistor Element Material :

SILICON

Number of Pins :

3

Contact Plating :

Tin

Weight :

188mg

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Factory Lead Time :

45 Weeks

Collector Emitter Voltage (VCEO) :

60V

Element Configuration :

Single

Gain Bandwidth Product :

75MHz

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

60V

Published :

2005

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Base Part Number :

NZT751

Length :

6.7mm

REACH SVHC :

No SVHC

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

Current Rating :

-4A

Max Power Dissipation :

1.2W

Transistor Application :

SWITCHING

Height :

1.7mm

Power Dissipation :

1.2W

ECCN Code :

EAR99

Package / Case :

TO-261-4, TO-261AA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Case Connection :

COLLECTOR

Terminal Position :

Dual

Pbfree Code :

yes

Width :

3.7mm

Number of Elements :

1

Mount :

Surface Mount

Frequency :

75MHz

Max Breakdown Voltage :

60V