NZT660A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Max Collector Current :

3A

Current Rating :

-3A

Power Dissipation :

2W

Max Breakdown Voltage :

60V

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA 2V

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Pbfree Code :

yes

Radiation Hardening :

No

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

500mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

-60V

Transistor Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Base Part Number :

NZT660

Gain Bandwidth Product :

75MHz

Package / Case :

TO-261-4, TO-261AA

Transition Frequency :

75MHz

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Voltage - Rated DC :

-60V

Packaging :

Tape and Reel (TR)

Weight :

188mg

Polarity/Channel Type :

PNP

Element Configuration :

Single

Number of Pins :

4

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

2W

Number of Terminations :

4

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

60V

hFE Min :

250

Vce Saturation (Max) @ Ib, Ic :

500mV @ 300mA, 3A

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

-5V

Number of Elements :

1

Frequency :

75MHz

Factory Lead Time :

24 Weeks

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Voltage (VCEO) :

60V