NZT560A
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- Mfr.Part #
- NZT560A
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A SOT223-4
- Stock
- 16,600
- In Stock ：
- 16,600
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 60V
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 300mA, 3A
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 75MHz
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Max Power Dissipation :
- 1W
- Width :
- 3.5mm
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PDSO-G4
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Weight :
- 188mg
- Collector Emitter Saturation Voltage :
- 400mV
- Collector Emitter Voltage (VCEO) :
- 60V
- Frequency :
- 75MHz
- Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- NZT560
- Length :
- 6.5mm
- Factory Lead Time :
- 14 Weeks
- Max Collector Current :
- 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.6mm
- Transition Frequency :
- 75MHz
- Current Rating :
- 3A
- hFE Min :
- 250
- Published :
- 2017
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Datasheets
- NZT560A
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT560A Overview
DC current gain in this device equals 250 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.As a result, the part has a transition frequency of 75MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3A volts.
NZT560A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 75MHz
NZT560A Applications
There are a lot of ON Semiconductor
NZT560A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NZT560 | onsemi | 4,197 | TRANS NPN 60V 3A SOT223-4 |
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