NXP3875GR
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- Mfr.Part #
- NXP3875GR
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO236AB
- Stock
- 2,930
- In Stock ：
- 2,930
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Max Collector Current :
- 150mA
- Collector Emitter Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 200mW
- Collector Emitter Saturation Voltage :
- 250mV
- Published :
- 2012
- Packaging :
- Tape and Reel (TR)
- Current - Collector (Ic) (Max) :
- 150mA
- Collector Emitter Voltage (VCEO) :
- 50V
- hFE Min :
- 120
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Gain Bandwidth Product :
- 80MHz
- Continuous Collector Current :
- 200mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Type :
- NPN
- Transition Frequency :
- 80MHz
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Number of Terminations :
- 3
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Datasheets
- NXP3875GR
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NXP3875GR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 6V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 200mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 80MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
NXP3875GR Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
NXP3875GR Applications
There are a lot of Nexperia USA Inc.
NXP3875GR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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