NV25010DWHFT3G

Manufacturer :

onsemi

Product Category :

Memory

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Memory Size :

1Kb 128 x 8

Memory Width :

8

Published :

2008

Series :

Automotive, AEC-Q100

JESD-609 Code :

e4

Voltage - Supply :

2.5V~5.5V

Terminal Pitch :

1.27mm

Packaging :

Tape and Reel (TR)

Memory Density :

1024 bit

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Voltage-Max (Vsup) :

5.5V

Memory Interface :

SPI

Number of Functions :

1

Memory Type :

Non-Volatile

Clock Frequency :

10MHz

Access Time :

40ns

Parallel/Serial :

Serial

Write Cycle Time-Max (tWC) :

4ms

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Organization :

128X8

JESD-30 Code :

R-PDSO-G8

Operating Temperature :

-40°C~150°C TA

Width :

3.9mm

Operating Mode :

SYNCHRONOUS

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Length :

4.9mm

Number of Terminations :

8

Memory Format :

EEPROM

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Write Cycle Time - Word, Page :

4ms

Height Seated (Max) :

1.75mm

Supply Voltage :

5V

Serial Bus Type :

SPI

Supply Voltage-Min (Vsup) :

2.5V

Mounting Type :

Surface Mount