NTE373

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Configuration :

Single

Power - Max :

1 W

Terminal Form :

THROUGH-HOLE

Power Dissipation Ambient-Max :

20 W

Transistor Type :

NPN

Product Status :

Active

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-126

HTS Code :

8541.29.00.75

Frequency - Transition :

140MHz

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

Reach Compliance Code :

Unknown

Number of Elements :

1

Supplier Device Package :

TO-126

Surface Mount :

No

Package Shape :

RECTANGULAR

Package :

Bag

Package / Case :

TO-225AA, TO-126-3

Collector Current-Max (IC) :

1.5 A

Current - Collector (Ic) (Max) :

1.5 A

Terminal Position :

Single

Number of Terminals :

3

Collector-Emitter Voltage-Max :

160 V

Operating Temperature :

150°C (TJ)

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

160 V

Current - Collector Cutoff (Max) :

10μA (ICBO)

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

20 W

Subcategory :

Other Transistors

JESD-30 Code :

R-PSFM-T3

Series :

-

Manufacturer :

NTE Electronics

DC Current Gain-Min (hFE) :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 150mA, 5V