NTE328
- Mfr.Part #
- NTE328
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 25A TO3
- Stock
- 18
- In Stock :
- 18
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50μA
- Power Dissipation-Max (Abs) :
- 140 W
- Power Dissipation Ambient-Max :
- 140 W
- Current - Collector (Ic) (Max) :
- 25 A
- Pin Count :
- 2 +Tab
- Mounting Type :
- Through Hole
- Operating Temperature Classification :
- Military
- Package / Case :
- TO-204AA, TO-3
- Power - Max :
- 200 W
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Current-Max (IC) :
- 25 A
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- -
- Product Status :
- Active
- Rad Hardened :
- No
- Category :
- Bipolar Power
- JEDEC-95 Code :
- TO-3
- DC Current Gain-Min (hFE) :
- 12
- Terminal Form :
- PIN/PEG
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA, 2V
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- DC Current Gain :
- 50
- Transistor Type :
- NPN
- Collector Current (DC) :
- 50(A)
- Collector-Emitter Voltage-Max :
- 120 V
- Number of Terminals :
- 2
- Polarity/Channel Type :
- NPN
- Package :
- Bag
- Reach Compliance Code :
- Unknown
- Surface Mount :
- No
- Package Type :
- TO-3
- Supplier Device Package :
- TO-3
- Output Power :
- Not Required(W)
- Power Dissipation :
- 200(W)
- Terminal Position :
- BOTTOM
- JESD-30 Code :
- O-MBFM-P2
- Frequency - Transition :
- 40MHz
- Frequency :
- 40(MHz)
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 2.5A, 25A
- Case Connection :
- COLLECTOR
- Package Shape :
- Round
- Collector-Base Voltage :
- 140(V)
- Manufacturer :
- NTE Electronics
- Subcategory :
- Other Transistors
- Mounting :
- Through Hole
- Emitter-Base Voltage :
- 6(V)
- Operating Temp Range :
- -65C to 200C
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Transistor Polarity :
- NPN
- Datasheets
- NTE328

NPN -65°C ~ 200°C (TJ) 50μA 1 Elements SILICON NPN TO-204AA, TO-3 Through Hole
NTE328 Overview
DC current gain in this device equals 50 @ 500mA, 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 2.5A, 25A.Product comes in TO-3 supplier package.Maximal collector-emitter voltage can be set at 120 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
NTE328 Features
the DC current gain for this device is 50 @ 500mA, 2V
the vce saturation(Max) is 1.8V @ 2.5A, 25A
the supplier device package of TO-3
NTE328 Applications
There are a lot of NTE Electronics, Inc
NTE328 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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