NTE315

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

750 mW

JESD-30 Code :

O-PBCY-T3

Frequency - Transition :

-

HTS Code :

8541.21.00.95

Subcategory :

Other Transistors

Collector-Emitter Voltage-Max :

50 V

Polarity/Channel Type :

NPN

Operating Temperature :

120°C (TJ)

Current - Collector (Ic) (Max) :

1 A

Mounting Type :

Through Hole

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Package Shape :

Round

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

0.75 W

Current - Collector Cutoff (Max) :

200nA (ICBO)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 50mA, 1A

DC Current Gain (hFE) (Min) @ Ic, Vce :

199 @ 100mA, 2V

Manufacturer :

NTE Electronics

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Series :

-

Number of Elements :

1

Terminal Position :

BOTTOM

Voltage - Collector Emitter Breakdown (Max) :

50 V

ECCN Code :

EAR99

Collector Current-Max (IC) :

1 A

Surface Mount :

No

Configuration :

Single

DC Current Gain-Min (hFE) :

70

Product Status :

Active

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Package / Case :

TO-226-3, TO-92-3 Long Body

Supplier Device Package :

TO-92L

Package :

Bag