NTE31

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-30 Code :

O-PBCY-W3

Operating Temperature :

-

Mounting Type :

Through Hole

Product Status :

Active

RoHS Status :

RoHS non-compliant

Supplier Device Package :

TO-92

Subcategory :

Other Transistors

Number of Terminals :

3

Package Length :

5.2(Max)

Series :

-

Reach Compliance Code :

Unknown

Voltage - Breakdown (V(BR)GSS) :

30 V

Package Shape :

Round

Supplier Package :

TO-92

Standard Package Name :

TO-92

Typical Power Gain (dB) :

18(Min)

ECCN (US) :

EAR99

FET Type :

N-Channel

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Terminal Form :

Wire

Lead Shape :

Through Hole

Transistor Application :

AMPLIFIER

Power Dissipation-Max (Abs) :

0.36 W

Automotive :

No

Manufacturer :

NTE Electronics

HTS Code :

8541.21.00.95

Voltage - Cutoff (VGS off) @ Id :

1 V @ 10 mA

JEDEC-95 Code :

TO-92

Channel Type :

N

Pin Count :

3

Maximum Gate Source Voltage (V) :

-30

Feedback Cap-Max (Crss) :

1 pF

Maximum Operating Temperature (°C) :

150

Package Height :

5.33(Max)

Qualification Status :

Not Qualified

Operating Mode :

Depletion Mode

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Number of Elements :

1

Minimum Operating Temperature (°C) :

-65

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

FET Technology :

JUNCTION

Configuration :

Single

Package :

Bag

Current - Drain (Idss) @ Vds (Vgs=0) :

5 mA @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

4.5pF @ 15V

Package Width :

4.2(Max)

Transistor Element Material :

SILICON

Mounting :

Through Hole

Type :

JFET

Power - Max :

360 mW

Terminal Position :

BOTTOM

PCB changed :

3

Material :

Si

Power Gain-Min (Gp) :

10 dB

Maximum Power Dissipation (mW) :

500