NSV2SC5658M3T5G

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Mfr.Part #
NSV2SC5658M3T5G
Manufacturer
onsemi
Package / Case
SOT-723
Datasheet
Download
Description
TRANS NPN 50V 0.15A SOT723
Stock
38,158
In Stock :
38,158

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
150mA
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
50V
Gain Bandwidth Product :
180MHz
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Transition Frequency :
180MHz
Polarity/Channel Type :
NPN
Terminal Finish :
Tin (Sn)
Factory Lead Time :
8 Weeks
Reference Standard :
AEC-Q101
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA 6V
Collector Emitter Voltage (VCEO) :
400mV
Published :
2012
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 50mA
Terminal Form :
Flat
Mounting Type :
Surface Mount
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
Max Power Dissipation :
260mW
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Number of Terminations :
3
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
500nA ICBO
Mount :
Surface Mount
Package / Case :
SOT-723
Transistor Type :
NPN
Collector Base Voltage (VCBO) :
5V
Max Collector Current :
150mA
JESD-609 Code :
e3
Transistor Application :
AMPLIFIER
Lead Free :
Lead Free
Datasheets
NSV2SC5658M3T5G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSV2SC5658M3T5G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Package / Case:SOT-723, NSV2SC5658M3T5G pinout, NSV2SC5658M3T5G datasheet PDF, NSV2SC5658M3T5G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSV2SC5658M3T5G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSV2SC5658M3T5G


NPN -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount

NSV2SC5658M3T5G Overview


In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.180MHz is present in the transition frequency.Maximum collector currents can be below 150mA volts.

NSV2SC5658M3T5G Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 180MHz


NSV2SC5658M3T5G Applications


There are a lot of ON Semiconductor
NSV2SC5658M3T5G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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