NSS30101LT1G

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Mfr.Part #
NSS30101LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 30V 1A SOT23-3
Stock
39,784
In Stock :
39,784

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-236-3, SC-59, SOT-23-3
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
30V
Base Part Number :
NSS30101
Max Collector Current :
1A
Current - Collector Cutoff (Max) :
100nA
Pin Count :
3
Surface Mount :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 500mA 5V
Peak Reflow Temperature (Cel) :
260
REACH SVHC :
No SVHC
Mounting Type :
Surface Mount
Collector Emitter Saturation Voltage :
200mV
Collector Emitter Voltage (VCEO) :
30V
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Pbfree Code :
yes
Contact Plating :
Tin
Collector Emitter Breakdown Voltage :
30V
hFE Min :
300
Emitter Base Voltage (VEBO) :
5V
Length :
3.04mm
Current Rating :
1A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency :
100MHz
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
Gull wing
Transistor Type :
NPN
Transition Frequency :
100MHz
Gain Bandwidth Product :
100MHz
Published :
2005
Power Dissipation :
710mW
Time@Peak Reflow Temperature-Max (s) :
40
Height :
1.11mm
Max Breakdown Voltage :
30V
Collector Base Voltage (VCBO) :
50V
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Number of Terminations :
3
Terminal Position :
Dual
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Max Power Dissipation :
310mW
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
200mV @ 100mA, 1A
Halogen Free :
Halogen Free
ECCN Code :
EAR99
Element Configuration :
Single
Polarity/Channel Type :
NPN
Factory Lead Time :
4 Weeks
Number of Elements :
1
Width :
2.64mm
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS30101LT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Base Part Number:NSS30101, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, NSS30101LT1G pinout, NSS30101LT1G datasheet PDF, NSS30101LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS30101LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS30101LT1G


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

NSS30101LT1G Overview


This device has a DC current gain of 300 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 200mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1A volts is possible.

NSS30101LT1G Features


the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz


NSS30101LT1G Applications


There are a lot of ON Semiconductor
NSS30101LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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